Composite Transistors
XP01507 (XP1507)
Silicon NPN epitaxial planar type
Unit: mm
+0.05
–0.02
0.12
For high breakdown voltage and low-noise amplification
0.20 0.05
5
4
3
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
1
2
• Reduction of the mounting area and assembly cost by one half
(0.65) (0.65)
1.3 0.1
2.0 0.1
■ Basic Part Number
• 2SC2631 × 2
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
150
Unit
V
1: Base (Tr1)
2: Emitter
4: Collector (Tr2)
5: Collector (Tr1)
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
150
V
3: Base (Tr2)
EIAJ: SC-88A
SMini5-G1 Package
(Collector open)
VCBO
IC
5
V
Emitter-base voltage
Collector current
50
mA
mA
mW
°C
Marking Symbol: 4O
Peak collector current
ICP
PT
100
Internal Connection
Total power dissipation
Junction temperature
Storage temperature
150
5
4
Tj
150
Tstg
−55 to +150
°C
Tr1
Tr2
3
1
2
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCEO
VEBO
ICBO
Conditions
Min
150
5
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
hFE ratio *
IC = 100 µA, IB = 0
IE = 10 µA, IC = 0
V
VCB = 100 V, IE = 0
VCE = 5 V, IC = 10 mA
1
µA
hFE
90
450
hFE(Small/ VCE = 5 V, IC = 10 mA
Large)
0.50
0.99
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 30 mA, IB = 3 mA
1
V
MHz
pF
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
150
2.3
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Ratio between 2 elements
*
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00148BED
1